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Faculty Details Avradeep Pal

Associate Professor

Avradeep Pal

Email: avradeep[at]iitb[dot]ac[dot]in

Phone: (+91) (022) 2576 7629

Education: 

  • PhD ­ Materials Science, University of Cambridge, 2014 
  • M. Tech ­ Materials Science, IIT Bombay, 2010 
  • B. Tech ­ Metallurgy and Materials Science, 2006
Teaching

In his teaching, Avradeep focuses primarily on conceptual understanding of origin of physical phenomena, with a special attention to stay clear of rote memorisation as much as possible. Courses taught: Undergraduate ­ Structure of Materials Post Graduate ­ Advanced Ceramics (Piezoelectrics, Ferromagnets, Superconductors)

Research profile

Avradeep's interests lie in the sphere of development, understanding and utilisation of novel phenomena that arises at hybrid material interfaces, and development of several novel quantum devices. The major focus is on the interface of thin film superconductors and ferromagnets. His work therefore spans from controlled Ultra High Vacuum growth of ultra thin film (2nm and lower) multi­layers, to nanofabrication of these layers into devices like tunnel junctions, spin valves, Jospehson junctions; and subsequent low temperature electronic transport measurements of such devices. For achieving the same, he has developed several highly customised UHV thin film deposition and fabrication systems, and has standardised a industry level niobium based junction fabrication process. This has led to the discovery of novel cryogenic memory devices and other cryogenic components such as Josephson diodes that are crucial for upcoming era of quantum technologies.

Research interest
  • Superconducting devices, 
  • Josephson effect, 
  • Superconducting spintronics

Domain wall superconductivity in GdN/Nb bilayers

Superconducting exchange coupling driven memory device

High frequency Josephson memory device at 4.2K

Faculty Details Amartya Mukhopadhyay

Professor

Amartya Mukhopadhyay

Email: amartya_mukhopadhyay[at]iitb[dot]ac[dot]in

Phone: (+91) (022) 2576 7612

Education:

  • PhD ­ Materials Science, University of Oxford ­ 2009 
  • M Tech ­ Matls. & Met. Engg, IIT Kanpur ­ 2006 
  • B E ­ Met, Engg. NIT Durgapur ­ 2003
Teaching

Teaches undergraduate courses on 'Electrochemistry of Materials and its Applications', 'Advanced Ceramics', 'Advanced Composites', postgraduate course on 'Structural Characterization of Materials'; have designed an elective course on 'Electrochemical and Materials Perspectives in Energy Storage'

Research profile

Prof Amartya Mukhopadhyay completed his Doctoral in Materials Research from the University of Oxford, UK, in 2009. He did his postdoctoral Research at Brown University, USA, for a couple of years. He is a Young Associate of the Indian National Academy of Engineering (INAE) and served as the Honorary Secretary of Mumbai Chapter of the Indian Institute of Metals (IIM). His research interests include materials for electrochemical energy storage (focusing on alkali metalion batteries) and engineering ceramics. Among his major accomplishments, he has been awarded with the ‘SwarnaJayanti Fellowship 2020­21’, recognized by the Royal Society of Chemistry (UK) journals as one of the ‘2019 Emerging Investigators’, awarded with the 'IIT Bombay Research Dissemination Award 2018', 'INAE Young Engineer Award 2016', 'ASM­IIM North America Visiting Lectureship 2016', 'IIT Bombay Young Investigator Award 2014' and 'Dr. R. L. Thakur Memorial Award' by the 'Indian Ceramic Society' in 2013.

Research interest
  • Electrode Materials and Electrode/ Electrolyte Interfaces for Li­/Na­/K­ion Batteries 
  • Electro­chemo­mechanical Responses of Electrode Materials 
  • Solid Electrolytes and All­Solid­State Li and Na Metal Batteries 
  • Electrochemical Energy Storage Devices (from materials → electrodes → cell development) 
  • Engineering Ceramics and • Ceramic Composites/Alloys

Revealing the dominant factors/parameters towards addressing air/water- instability and structural- cum­ electrochemical instability of ‘layered’ Na- tran sition metal oxide based cathode materials for Na­ion

Addressing High Voltage Structural and Electrochemical Instability of Ni­containing Layered Transition Metal (TM) Oxide cathodes by ‘blocking’ the ‘TM­migration’ pathway in the Lattice [2]

Designing high Na- containing P2­structured ‘layered’ Na­ transition metal oxides as high- performance cathode materials for Na­ion batteries [3]

References
  1. B. [1] B. S. Kumar, A. Pradeep, V. Srihari, H. K. Poswal, R. Kumar, A. Amardeep, A. Chatterjee and A. Mukhopadhyay: Cation­oxygen bond covalency: A common thread and a major influence towards air/water­stability and electrochemical behavior of 'layered' Na­ transition metal oxide based cathode materials. Adv. Energy Mater. 13 [19] (2023) 2204407: 1­15 (https://doi.org/10.1002/aenm.202204407) 
  2. A. Sharma, A. Rajkamal, S. Kobi, B. S. Kumar, A. K. Paidi, A. Chatterjee and A. Mukhopadhyay: Addressing the High Voltage Structural and Electrochemical Instability of Nicontaining Layered Transition Metal (TM) Oxide cathodes by blocking the TM­migration pathway in the Lattice; ACS Appl. Mater. Interfaces 13 [22] (2021) 25836–25849 
  3. B. S. Kumar, R. Kumar, A. Pradeep, A. Amardeep, V. Srihari, H. K. Poswal, A. Chatterjee and A. Mukhopadhyay: Fundamental principles toward designing high Na­containing P2­structured "layered" Na­ transition metal oxides as highperformance cathode materials for Na­ion batteries; Chem. Mater. 34 [23] (2022) 10470–10483

Faculty Details Abhinandan Gangopadhyay

Assistant Professor

Abhinandan Gangopadhyay

Email: abhinandan[dot]g[at]iitb[dot]ac[dot]in

Phone: (+91) (022) 2576 7603

Education:

  • PhD ­ Materials Sc & Engg, Arizona State Univ, USA 
  • MTech ­ Metallurgical Engg & Materials Sc, IIT Bombay, India 
  • BE ­ Metallurgy & Materials, IIEST Shibpur, India
Teaching

Prof. Gangopadhyay has taught undergraduate course on Mechanical Behaviour of Materials. He will be offering a comprehensive graduate level course on Transmission Electron microscopy.

Research profile

Prof. Abhinandan Gangopadhyay is interested in applying advanced electron microscopy techniques to study defects and interfaces in advanced functional and structural materials. He has previously studied the core structure of various interfacial defects such as dissociated 60° dislocation [1], Lomer dislocation [2], dissociated 90° dislocation [3] in GaAs(001)­based heterostructures using high­angle annular­dark­field (HAADF) mode of aberration­corrected scanning transmission electron microscopy (AC­STEM). Prof. Gangopadhyay has also worked on STEM­EDX characterization of grain boundary segregation in novel polycrystalline GaInP solar cells. As part of his recent industrial work experience, he has worked on nanometer­scale characterization of state­of­the­art semiconductor devices using focused ion beam (FIB) technique in conjunction with AC­STEM. His current research interests include segregation studies using STEM spectrum images and strain mapping using geometric phase analysis (GPA) and 4D STEM in advanced materials.

Research interest
  • Thin films of functional materials 
  • Pulsed Laser Deposition and Sputter Deposition

Aberration­corrected HAADF­STEM images of dissociated 60 degree dislocation and its bounding partials located at GaAsSb/GaAs interface [1]

Aberration­corrected HAADF­STEM image of a Lomer dislocation located at GaSb/GaAs interface [2]

Aberration­corrected HAADF­STEM image of a dissociated 90 degree dislocation located at GaAsSb/GaAs interface [3]

References
  1. Gangopadhyay A, Maros A, Faleev N & Smith DJ. Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures. Scripta Materialia 2018;153:77–80. 
  2. Gangopadhyay A, Rotter TJ, Balakrishnan G, Smith DJ. Atomic­scale Structural Imaging of Interfacial Defects in GaAs(001)­based Heterostructures. Microscopy and Microanalysis. 2021;27(S1):2356­2357. 
  3. Gangopadhyay A, Zhang C, Maros A, Faleev, N, King RR, Honsberg CB & Smith, DJ Extended defects in GaAs/GaAs1­xSbx/GaAs (001) heterostructures. Scripta Materialia 2023;225:115150.

Faculty details Abhijeet L. Sangle

Assistant Professor

Abhijeet L. Sangle

Email: alsangle[at]iit[dot]ac[dot]in

Phone: (+91) (022) 2159 6742

Education:

  • PhD ­ Materials Science, University of Cambridge, 2016 
  • (B.Tech. + M.Tech.) Dual degree ­ Metl. Engg. & Matls. Sci. IIT Bombay, 2011
Teaching

Abhijeet is interested in pedagogy of structure­property relationships and functional materials in general. 

UG courses: Structure of Materials (Autumn semester), Materials Processing Laboratory (Spring semester) 

PG courses: Principles and Applications of Ferroelectric and Piezoelectric materials (proposed, starting Spring semester 2024)

Research profile

Abhijeet works in the broad area of thin films of functional materials for various applications. He is particularly interested in employing nanostructuring to enhance various properties of thin films of functional materials. One of the main themes of his research is self­assembled vertically aligned nanocomposite (VAN) films incorporating functional materials such as piezoelectrics, ferroelectrics, thermoelectrics and photoactive materials for applications in the areas of tunable high frequency devices 1 , sensors and actuators; energy harvesting 2 and storage; non­volatile memories 3 , etc. Abhijeet leverages the pulsed laser deposition facilities available in the department to grow these films. Besides, he is also working towards building a multi­target co- sputter deposition facility equipped with advanced in situ diagnostics. Drawing inspiration from his prior work in aerosol­jet printing technology 4 , Abhijeet is also working on developing bespoke inks of functional materials for various printed electronic devices. In the past, Abhijeet was a part of the corporate R & D division of Applied Materials India, where he worked on large area deposition of thin films of various piezoelectric materials. Given his background in industry, Abhijeet is highly passionate about translational research, taking lab­scale ideas to working prototypes/scaling up studies.

Research interest
  • Thin films of functional materials 
  • Pulsed Laser Deposition and Sputter Deposition 
  • Self­assembled vertically aligned nanocomposite (VAN) thin films 
  • Ferroelectrics, piezoelectrics, photoelectrochemical green hydrogen generation, thermoelectrics, non­volatile memories

Schematic of PLD and VAN th in films

Schematic of Aerosol­jet printing process showing implementation of in situ mixing to print composite materials

SrTiO3­Sm2O3 (30­70 wt%) VAN films, 250nm thick (a) Cross­sectional STEM, (b) Plan- view STEM, (c) reciprocal space map, (d) AFM image showing topography. Source: Sangle, A. L., et al., Nanoscale (2018); STEM image credits: H. Wang group, TAMU (now at Purdue)

References
  1. Sangle, A. L. et al. Very high commutation quality factor and dielectric tunability in nanocomposite SrTiO3 thin films with Tc enhanced to >300 °C. Nanoscale 10, 3460–3468 (2018). 
  2. Sangle, A. L. et al. Very High Surface Area Mesoporous Thin Films of SrTiO3 Grown by Pulsed Laser Deposition and Application to Efficient Photoelectrochemical Water Splitting. Nano Lett 16, 7338–7345 (2016). 
  3. Lee, S. et al. Novel electroforming­free nanoscaffold memristor with very high uniformity, tunability, and density. Advanced Materials 26, 6284–6289 (2014). 
  4. Ou, C. et al. Enhanced thermoelectric properties of flexible aerosol­jet printed carbon nanotube­based nanocomposites. APL Mater 6, 096101 (2018).
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