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Faculty details Arka Mandal

Assistant Professor

Arka Mandal

Email: arkamandal[at]iitb[dot]ac[dot]in

Phone: +91-22-2576-7636

Education:

  • Ph. D. Metallurgical and Materials Engineering, IIT Kharagpur, 2023 
  • M. S. Metallurgical and Materials Engineering, IIT Kharagpur, 2016 
  • B. E. Metallurgy and Materials Engineering, IIEST Shibpur (Erstwhile BESU Shibpur), 2010
Teaching

In his teaching, Prof. Arka Mandal strives to break down fundamental concepts to the greatest possible extent, to help students understand why they study what they study. 

Courses taught: Diffusion and Kinetics (PG) 

Courses to be taught: Principles of Crystallographic Texture (UG/PG), Thermomechanical Processing and Forming of Steel (UG/PG)

Research profile

Prof. Arka Mandal's research focuses on the deformation behaviour of metallic materials across length scales, from bulk response to nanoindentation, with emphasis on crystalline defects [1], solid-state phase transformations, and the processing-structure-texture-property correlation in steels. He employs advanced electron microscopy and related characterization techniques [2] to reveal the role of defects, interfaces, and microstructural evolution in governing mechanical behaviour. His work integrates experimental analysis with a fundamental understanding of deformation and transformation mechanisms to build structure-sensitive insights for metallic systems. A strong focus of his research is on steels, where texture evolution [3] and phase stability are linked to performance under service conditions. Overall, his research aims to connect microstructural features with macroscopic properties for the design of stronger, more reliable engineering materials.

Research interest
  • Deformation Behaviour of Metallic Materials Across Length Scales 
  • Advanced Electron Microscopy-based Characterization of Crystalline Defects 
  • Solid State Phase Transformation 
  • Processing-Structure-Texture-Property Correlation in Steel

Spherical load vs. indentation depth curve shows the largest load dips, and dislocation structure beneath the indentation at incremental depths.

The HR-EBSD maps showing one difference of terms and five known terms of the Nye tensor: (a) α11−α22, (b) α12 (edge), (c) α13 (edge), (d) α21 (edge), (e) α23 (edge), and (f) α33 (screw), with the sample reference frame shown.

φ2 = 0°, 45°, and 65° sections of the orientation distribution function of FCC-austenite in strain-free, 0.05 strained (simulated), 0.1 strained (simulated), and 0.2 strained (simulated and experimentally obtained) conditions. Simulation is done in VPSC.

References
  1. A. Mandal, S. Biswal, S. B. Singh, D. Chakrabarti. (2025). Unlocking the synergy: How tip-radius and crystal orientation govern indentation in ferrous FCC Alloys. Materialia, DOI: 10.1016/j.mtla.2025.102621 
  2. A. Mandal, B. Beausir, J. Guyon, V. Taupin, A. Guitton. (2025). Estimation of Dislocation Densities With Nondestructive Scanning Electron Microscope Techniques: Application to Gallium Nitride. Microscopy and Microanalysis, DOI: 10.1093/mam/ozae124 
  3. A. Mandal, S. Morankar, M. Sen, S. Samanta, S. B. Singh, D. Chakrabarti. (2020). A Descriptive Model on the Grain Size Dependence of Deformation and Martensitic Transformation in Austenitic Stainless Steel. Metallurgical and Materials Transactions A, DOI: 10.1007/s11661-020-05861-7

Faculty Details Abhinandan Gangopadhyay

Assistant Professor

Abhinandan Gangopadhyay

Email: abhinandan[dot]g[at]iitb[dot]ac[dot]in

Phone: (+91) (022) 2576 7603

Education:

  • PhD ­ Materials Sc & Engg, Arizona State Univ, USA 
  • MTech ­ Metallurgical Engg & Materials Sc, IIT Bombay, India 
  • BE ­ Metallurgy & Materials, IIEST Shibpur, India
Teaching

Prof. Gangopadhyay has taught undergraduate course on Mechanical Behaviour of Materials. He will be offering a comprehensive graduate level course on Transmission Electron microscopy.

Research profile

Prof. Abhinandan Gangopadhyay is interested in applying advanced electron microscopy techniques to study defects and interfaces in advanced functional and structural materials. He has previously studied the core structure of various interfacial defects such as dissociated 60° dislocation [1], Lomer dislocation [2], dissociated 90° dislocation [3] in GaAs(001)­based heterostructures using high­angle annular­dark­field (HAADF) mode of aberration­corrected scanning transmission electron microscopy (AC­STEM). Prof. Gangopadhyay has also worked on STEM­EDX characterization of grain boundary segregation in novel polycrystalline GaInP solar cells. As part of his recent industrial work experience, he has worked on nanometer­scale characterization of state­of­the­art semiconductor devices using focused ion beam (FIB) technique in conjunction with AC­STEM. His current research interests include segregation studies using STEM spectrum images and strain mapping using geometric phase analysis (GPA) and 4D STEM in advanced materials.

Research interest
  • Thin films of functional materials 
  • Pulsed Laser Deposition and Sputter Deposition

Aberration­corrected HAADF­STEM images of dissociated 60 degree dislocation and its bounding partials located at GaAsSb/GaAs interface [1]

Aberration­corrected HAADF­STEM image of a Lomer dislocation located at GaSb/GaAs interface [2]

Aberration­corrected HAADF­STEM image of a dissociated 90 degree dislocation located at GaAsSb/GaAs interface [3]

References
  1. Gangopadhyay A, Maros A, Faleev N & Smith DJ. Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures. Scripta Materialia 2018;153:77–80. 
  2. Gangopadhyay A, Rotter TJ, Balakrishnan G, Smith DJ. Atomic­scale Structural Imaging of Interfacial Defects in GaAs(001)­based Heterostructures. Microscopy and Microanalysis. 2021;27(S1):2356­2357. 
  3. Gangopadhyay A, Zhang C, Maros A, Faleev, N, King RR, Honsberg CB & Smith, DJ Extended defects in GaAs/GaAs1­xSbx/GaAs (001) heterostructures. Scripta Materialia 2023;225:115150.
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