Prof. Tanushree Choudhury is interested in the processing of electronic materials for optoelectronic applications. She has experience with wafer­scale synthesis of ‘near­single crystal’ epitaxial layered transition metal dichalcogenides by metalorganic chemical vapor deposition (MOCVD). The key to achieving epitaxial coalesced films was controlling the surface termination of the sapphire substrate.[1,2] The nucleation and growth stages were separated out to achieve larger domains and lower grain boundaries. She is extending this work by introducing defects and modulating composition of these monolayer epitaxial films. She has also been involved in the synthesis of anodized oxide nanostructures on films and as free­standing membranes, where solution treatment can be used to increase the thermal stability of these nanostructures.[3] These anodized nanostructures are ideal candidates for sensing and capacitive deionization. Her group is now exploring the synthesis of air­stable layered materials by solution synthesis which can be used for low power transistors and neuromorphic applications. By controlling the solvent, ambient for crystallization and the nucleation rates, coalesced films of layered molybdenum oxide have been synthesized. Controlling the nucleation rates and suppressing diffusion of species is key to achieving coalesced films of these materials. These coalesced oxide films can now serve as substrates as will used as independent optoelectronic elements. Her research focusses on establishing the processing­ property correlation while emphasizing on the mechanism for the microstructure formation.