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Associate Professor

Titas Dasgupta

Email: titas[dot]dasgupta[at]iitb[dot]ac[dot]in

Phone: (+91) (022) 2576 7627

Education: 

  • PhD ­ Materials Research Center, IISc, Bangalore, 2007 
  • MSc(Engg) Materials Research Center, IISc, Bangalore, 2002
Teaching

Some courses taught are: 

Undergraduate Courses: Electronic Properties of Materials, Instrumentation and Process Control 

Postgraduate Courses: Thermo electric Materials, Modelling and Analysis

Research profile

Our research group (Thermoelectric Materials and Devices Lab) is specifically interested in bulk thermoelectric materials for Power Generation. Some of our current research activities are listed below: a) High performance materials discovery by engineering electrical and thermal properties: Material systems which are currently being investigated are solid solutions of Mg2Si­Mg2Sn, Mg3Sb2­Mg3Bi2 and ZnSb­CdSb. Solid solutions are known to possess better thermoelectric properties compared to the end members. This is due to the possibility for tuning both the electrical and thermal properties by varying the chemical composition. Our work involves improving TE properties in these solid solutions using a combination of conventional techniques and material specific effects identified from our research. b) Modelling of electronic band structure of thermoelectric materials: Band structure modelling is a topic of interest in TE research as it provides valuable information regarding microscopic material parameters and also for predicting high performance compositions. The modelling work carried out in our group can be subdivided into (i) solution­based approach and (ii) refinement­based optimization approach. We have recently developed a refinement based technique (MBRT) which can handle multiple EBS variables and therefore provide information in TE materials with complex band structures. c) Thermoelectric device fabrication and measu rements: Our research also involves development of suitable electrodes (contacting) and fabrication of TE modules from the in­ house developed materials and their property measurements. We have developed a generic approach for contacting (multi­layer contacting technique) TE materials and demonstrated a conversion efficiency of up to 10% using the high performance materials developed in our group.

Research interest
  • Thermoelectric materials and devices 
  • Charge and Heat Transport Modelling in semiconductors 
  • Thermoelectric metrology and instrumentation

Thermoelectric performance (zT) enhancement due to formation of embedded nano­precipitates in Mg2Si0.3Sn0.7

Estimation of electronic band structure parameters and calculation of thermoelectric properties in Mg2Si using the MBRT technique

Demonstration of 10% conversion efficiency in a single leg Mg3Sb1.5Bi0.5 thermoelectric device